U.S. EPC Power Conversion (EPC) and U.S. Integrated Device Technology (IDT) announced the joint development of semiconductor products using GaN (GaN) technology. EPC is a professional semiconductor manufacturer that uses GaN materials to produce power devices. The company hopes to integrate IDT's packaging technology and circuit technology into its products to open up new markets.
The contents of cooperation and development between the two parties are mainly divided into three aspects. The first is power devices for communication equipment and computer infrastructure. It will combine EPC's GaN FET chip and IDT's chip-scale packaging technology. With the existing packaging technology, the parasitic inductance is often large and the high speed capability of the GaN-based FET cannot be fully utilized. By combining with packaging technology that can reduce the height of parasitic inductance, high-frequency operation and high-efficiency work can be achieved at the same time.
The second is wireless power supply. The Alliance for Wireless Power (A4WP), a promotion group for wireless power supply technology, has set the operating frequency of the magnetic resonance-based wireless power supply standard to a high value of 6.76 MHz. By using GaN-based FETs suitable for high-frequency operation in wireless power supply, it is possible to achieve the same efficiency as wired power supply.
The third is RF devices for the communications infrastructure market. EPC now mainly produces power devices, and will build together with IDT the RF device product line. (Special Contributor: Yamashita is better than himself)
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